Meija, R.; Livshits, A.; Kosmaca, J.; Jasulaneca, L.; Andzane, J.; Biswas, S.; Holmes, J. D.; Erts, D.

2019

July

Nanotechnology

Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

Validated

Altmetric: 1 ()

30

38

385203(1)

385203(6)

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Bristol, UK

1361-6528

https://iopscience.iop.org/article/10.1088/1361-6528/ab2b11

10.1088/1361-6528/ab2b11