Peer-Reviewed Journal Details
Mandatory Fields
Alyamani, Ahmed; Lutsenko, Evgenii V.; Rzheutski, Mikalai V.; Zubialevich, Vitaly Z.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Shulenkova, Varvara A.; Yablonskii, Gennadii P.; Petrov, Stanislav I.; Alexeev, Alexey N.
2019
April
Japanese Journal of Applied Physics
AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy
Validated
()
Optional Fields
Hybrid epitaxy
58
SC
1
5
The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ~0.7nm was achieved for the sample grown by NH3 MBE at a substrate temperature of 1085C and NH3 flow of 100 standard cm3min-1. Atomic force microscopy measurements demonstrated a terrace-monolayer step-like surface morphology. Furthermore, the optimal substrate temperature for growth of GaN and AlGaN layers was determined from analysis of the GaN thermal decomposition rate. Using the optimized growth conditions, high electron mobility transistor heterostructures were grown by NH3 MBE on different types of AlN nucleation layer deposited by NH3 MBE or PA MBE. The grown heterostructures demonstrated comparable two-dimensional electron gas (2DEG) properties. The maximum 2DEG mobility of ~2000cm2 V1s1) at a 2DEG density of ~1.17 1013cm-2 was achieved for the heterostructure with a PA MBE-grown AlN nucleation layer. The obtained results demonstrate the possibility of successful combination of different epitaxial approaches within a single growth process, which will contribute to the development of a new type of hybrid epitaxy that exploits the advantages of several technologies.
0021-49221347-4065
http://dx.doi.org/10.7567/1347-4065/ab06b4
10.7567/1347-4065/ab06b4
Grant Details