Peer-Reviewed Journal Details
Mandatory Fields
Huet K.;Shayesteh M.;Toqué-Tresonne I.;Negru R.;Daunt C.;Kelly N.;O'Connell D.;Yu R.;Djara V.;Carolan P.;Petkov N.;Duffy R.
2014
January
Physica Status Solidi C - Current Topics In Solid State Physics
Laser thermal anneal formation of atomically-flat low-resistive germanide contacts
Validated
Scopus: 3 ()
Optional Fields
Contact resistance Germanide Germanium Laser thermal annealing Sheet resistance Transfer length method
11
1
169
173
In this work, state-of-the-art laser thermal annealing (LTA) is used to form germanide contacts on n-doped Ge, and is compared to results generated by rapid thermal annealing (RTA). Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both techniques. For electrical characterization, specific contact resistivities ¿{variant}c are extracted. It is shown that LTA can produce a uniform contact with a remarkably smooth substrate interface, with ¿{variant}c 2-3 orders of magnitude lower than the equivalent RTA case. A ¿{variant}c of 2.84×10-7 O.cm2 is achieved for optimized LTA parameters. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
1862-6351
10.1002/pssc.201300168
Grant Details