Baig, J.;Roycroft, B.; O’Callaghan, J. ;Robert, C. ;Ye, N.; Gleeson, M.; Gocalinska, A. ;Pelucchi, E.; Townsend, P.; Corbett, B.

2016 Conference on Lasers and Electro-Optics, CLEO 2016

Quantum well intermixing in 2 µm InGaAs multiple quantum well structures

2016

June

Published

1

()

Gallium alloys Gallium compounds Indium alloys Light Quantum well lasers Semiconducting indium gallium arsenide Semiconductor alloys Silica Differential shifts Monolithic integration Multiple quantum-well structures Quantum well intermixing Semiconductor quantum wells

SM4R.4

San Jose, California, USA

05-JUN-16

10-JUN-16

Quantum well intermixing in 2µm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

10.1364/CLEO_SI.2016.SM4R.4