Conference Publication Details
Mandatory Fields
Duffy R.;Shayesteh M.
AIP Conference Proceedings
FinFET doping; material science, metrology, and process modeling studies for optimized device performance
2010
December
Validated
1
Scopus: 9 ()
Optional Fields
doping FinFETs Ion implantation multi-gate devices
17
22
In this review paper the challenges that face doping optimization in 3-dimensional (3D) thin-body silicon devices will be discussed, within the context of material science studies, metrology methodologies, process modeling insight, ultimately leading to optimized device performance. The focus will be on ion implantation at the method to introduce the dopants to the target material. 2010 American Institute of Physics.
10.1063/1.3548341
Grant Details