Conference Publication Details
Mandatory Fields
Gity F.;Moghaddasi M.;Ansari L.
2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008
Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode
2008
December
Validated
1
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Optional Fields
Finite difference method Heat sink High power quantum well laser Surface recombination velocity
26
28
In this paper, thermal behavior of GaAs/AlGaAs single quantum well (SQW) high power laser diode (HPLD) is modeled by means of finite difference method (FDM). A numerical model is introduced that calculates the time dependant axial variations of photon density, carrier density and temperature in the semiconductor laser, self-consistently. The dynamic response of the high power laser's back facet temperature and the influence of the surface recombination velocity on the temperature of both facets are modeled numerically. The two-dimensional temperature distribution in the Cupper heat sink is also demonstrated. In order to gain precise results we use the Fermi's Golden Rule to calculate the exact temperature-dependent gain function of the quantum well laser. © 2008 IEEE.
10.1109/LFNM.2008.4670360
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