Goyvaerts, J;Kumari, S;Uvin, S;Zhang, J;Baets, R;Gocalinska, A;Pelucchi, E;Corbett, B;Roelkens, G

2020

July

Optics Express

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Validated

WOS: 14 ()

III-V

28

21275

21285

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

WASHINGTON

1094-4087

10.1364/OE.395796