Peer-Reviewed Journal Details
Mandatory Fields
Goyvaerts, J;Kumari, S;Uvin, S;Zhang, J;Baets, R;Gocalinska, A;Pelucchi, E;Corbett, B;Roelkens, G
2020
July
Optics Express
Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Validated
WOS: 14 ()
Optional Fields
III-V
28
21275
21285
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
WASHINGTON
1094-4087
10.1364/OE.395796
Grant Details