Caruso,Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.

2020

August

IEEE Transactions On Electron Devices

The role of oxide traps aligned with the semiconductor energy gap in MOS systems

Published

WOS: 7 ()

Al2O3 Capacitance–voltage (C–V) Conductance–voltage (G–V) Defects InGaAs Interface traps Multifrequency Multiphonon Nonradiative multiphonon (NMP) Oxide traps Quantization Quantum effects Spectroscopy TCAD Tunneling

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This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is considered, the traps with energy aligned to the semiconductor bandgap play a significant role in the frequency dispersion of the capacitance–voltage ( C–V ) and conductance–voltage ( G–V ) characteristics of metal–oxide–semiconductor (MOS) systems. The work also highlights that a nonlocal model for tunneling into interface states is mandatory to reproduce experiments when carrier quantization in the inversion layer is accounted for. A model, including these ingredients, is used to evaluate the energy and depth distribution of oxide traps in a n-In 0.53 Ga 0.47 As/Al 2 O 3 MOS system and is able to accurately fit the C–V frequency dispersion from depletion to weak inversion. The oxide trap distribution determined from the C–V response predicts the corresponding G–V dispersion with frequency.

0018-9383

10.1109/TED.2020.3018095

European Commission