Curran A.;Gocalinska A.;Pescaglini A.;Secco E.;Mura E.;Thomas K.;Nagle R.E.;Sheehan B.;Povey I.M.;Pelucchi E.;O’dwyer C.;Hurley P.K.;Gity F.

2021

February

Crystals

Structural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500^¿c

Validated

WOS: 1 ()

InAs Polycrystalline Thin films

11

2

1

11

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm /V·s achieved at room temperature, and values reaching 155 cm /V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al O ) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum I /I > 250 achieved at -50 C and I /I = 90 at room temperature. Factors limiting the I /I ratio are investigated and recommendations are made for future implementation of this material. ¿ 2 2 ¿ 2 3 ON OFF ON OFF ON OFF

2073-4352

10.3390/cryst11020160