Peer-Reviewed Journal Details
Mandatory Fields
Curran A.;Gocalinska A.;Pescaglini A.;Secco E.;Mura E.;Thomas K.;Nagle R.E.;Sheehan B.;Povey I.M.;Pelucchi E.;Odwyer C.;Hurley P.K.;Gity F.
2021
February
Crystals
Structural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500c
Validated
WOS: 1 ()
Optional Fields
InAs Polycrystalline Thin films
11
2
1
11
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm /Vs achieved at room temperature, and values reaching 155 cm /Vs for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al O ) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum I /I > 250 achieved at -50 C and I /I = 90 at room temperature. Factors limiting the I /I ratio are investigated and recommendations are made for future implementation of this material. 2 2 2 3 ON OFF ON OFF ON OFF
2073-4352
10.3390/cryst11020160
Grant Details