McInerney, JG and Mooradian, A and Lewis, A and Shchegrov, A and Strzelecka, EM and Lee, D and Watson, JP and Liebman, A and Carey, GP and Cantos, BD and Hitchens, WR and Heald, D;

2003

Electronics Letters

High-power surface emitting semiconductor laser with extended vertical compound cavity

Validated

Altmetric: 1 ()

39

6

523

525

Novel, electrically pumped vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated I W continuous-wave,e multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90\% coupling efficiency into a singlemode fibre.

10.1049/el:20030300