Peer-Reviewed Journal Details
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Green, R. T. and Luxmoore, I. J. and Houston, P. A. and Ranalli, F. and Wang, T. and Parbrook, P. J. and Uren, M. J. and JWallis, D. and Martin, T.;
2009
Semiconductor Science and Technology
Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
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24
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A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a C(l)2/Ar/O-2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.
10.1088/0268-1242/24/7/075020
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