Peer-Reviewed Journal Details
Mandatory Fields
Green, R. T. and Luxmoore, I. J. and Houston, P. A. and Ranalli, F. and Wang, T. and Parbrook, P. J. and Uren, M. J. and JWallis, D. and Martin, T.;
Semiconductor Science and Technology
Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
Optional Fields
A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a C(l)2/Ar/O-2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.
Grant Details