Peer-Reviewed Journal Details
Mandatory Fields
ONOMURA, M and ISHIKAWA, M and NISHIKAWA, Y and SAITO, S and PARBROOK, PJ and NITTA, K and RENNIE, J and HATAKOSHI, G;
1993
November
Electronics Letters
BLUE-GREEN LASER-DIODE OPERATION OF CDZNSE/ZNSE MQW STRUCTURES GROWN ON INGAP BAND-OFFSET REDUCTION LAYERS
Validated
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Optional Fields
29
24
2114
2115
A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.
Grant Details