Peer-Reviewed Journal Details
Mandatory Fields
PARBROOK, PJ and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B;
1991
Semiconductor Science and Technology
INTERDIFFUSION IN WIDE-BANDGAP ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES
Validated
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Optional Fields
6
8
818
821
The extent of interdiffusion in wide-bandgap II-VI superlattices of ZnS-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550-degrees-C. It is shown that although ZnS-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450-degrees-C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.
Grant Details