Coleman, E;Mirabelli, G;Bolshakov, P;Zhao, P;Caruso, E;Gity, F;Monaghan, S;Cherkaoui, K;Balestra, V;Wallace, RM;Young, CD;Duffy, R;Hurley, PK

2021

December

Solid-State Electronics

Investigating interface states and oxide traps in the MoS2/oxide/Si system

Validated

WOS: 1 ()

186

This paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.

OXFORD

0038-1101

10.1016/j.sse.2021.108123