Peer-Reviewed Journal Details
Mandatory Fields
Marquez, C;Salazar, N;Gity, F;Galdon, JC;Navarro, C;Duffy, R;Hurley, P;Gamiz, F
2021
December
Solid-State Electronics
Performance and reliability in back-gated CVD-grown MoS2 devices
Validated
()
Optional Fields
TRANSISTORS HYSTERESIS INTERFACE ROADMAP NOISE
186
In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.
OXFORD
0038-1101
10.1016/j.sse.2021.108173
Grant Details