Peer-Reviewed Journal Details
Mandatory Fields
Green, RT; Luxmoore, J; Lee, KB; Houston, PA; Ranalli, F; Wang, T; Parbrook, PJ; Uren, MJ; Wallis, DJ; Martin, T;
Journal of Applied Physics
Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe
Optional Fields

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 mu m are fabricated. Heavily doped n(+)GaN caps enabled contact resistances of 0.3 Omega mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457356]

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