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Davies, S. C. and Mowbray, D. J. and Ranalli, F. and Parbrook, P. J. and Wang, Q. and Wang, T. and Yea, B. S. and Sherliker, B. J. and Halsall, M. P. and Kashtiban, R. J. and Bangert, U.;
2009
Applied Physics Letters
Optical and microstructural studies of InGaN/GaN quantum dot ensembles
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An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra. (C) 2009 American Institute of Physics. [doi:10.1063/1.3226645]
10.1063/1.3226645
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