Peer-Reviewed Journal Details
Mandatory Fields
Airey, R. J. and Lee, K. B. and Parbrook, P. J. and Bai, J. and Ranalli, F. and Wang, T. and Hill, G.;
2008
Journal Of Physics D-Applied Physics
Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer
Validated
()
Optional Fields
41
9
Ultra-violet light emitting diodes with an increased efficiency have been produced. The increase in efficiency was brought about by the introduction of a thin GaN layer between the AlN buffer and the subsequent AlGaN layers. The GaN interlayer causes a reduction in the number of threading dislocations that propagate through the ultra-violet light emitting structure. Temperature dependent electroluminescence measurements show an improved performance at temperatures up to 400 K.
10.1088/0022-3727/41/9/094004
Grant Details