Peer-Reviewed Journal Details
Mandatory Fields
Olaizola, S. M. and Fan, W. H. and Mowbray, D. J. and Skolnick, M. S. and Parbrook, P. J. and Fox, A. M.;
Superlattices And Microstructures
Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells
Optional Fields
We have studied the photoluminescence and time-resolved photoluminescence of a set of InGaN quantum wells with well thickness from 1 to 7.5 nm. An analysis of the phonon satellites at 5 K shows Huang-Rhys factors from 0.32 to 0.44. The increase of this factor is caused by the electron-hole separation induced by the piezoelectric field. The time-resolved photoluminescence at room temperature shows that the decay time of the 1 and 2 nm wells does not depend on the wavelength. The maximum decay time is around 600 ps for the 2, 3 and 4 nm wells. However, for the 3 and 4 nm wells a decrease of the photoluminescence decay time is observed at the highest wavelengths. This suggest the onset of a non-radiative process in these samples. The optimum well width for efficient emission for these single quantum wells was found to be 2 nm. (c) 2007 Elsevier Ltd. All rights reserved.
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