Peer-Reviewed Journal Details
Mandatory Fields
King, P. D. C. and Veal, T. D. and Jefferson, P. H. and McConville, C. F. and Wang, T. and Parbrook, P. J. and Lu, Hai and Schaff, W. J.;
Applied Physics Letters
Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
Optional Fields
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.
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