Peer-Reviewed Journal Details
Mandatory Fields
Wang, T and Parbrook, PJ and Harrison, CN and Ao, JP and Ohno, Y;
Journal of Crystal Growth
Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-y N distributed Bragg reflectors
Optional Fields
By introducing Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362 nm, the GaN bandgap. (C) 2004 Elsevier B.V. All rights reserved.
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