Peer-Reviewed Journal Details
Mandatory Fields
Murray, RT and Hill, G and Hopkinson, M and Parbrook, PJ;
2003
Crack initiation and termination in III-V epitaxial layers
Validated
Optional Fields
83
27
3077
3092
Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.
10.1080/14786430310001606154
Grant Details