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O'Neill, JP and Ross, IM and Cullis, AG and Wang, T and Parbrook, PJ;
2003
Applied Physics Letters
Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
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83
10
1965
1967
We report a study of the morphology and composition of InxGa1-xN/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of similar to100 pA/cm(2), was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope. (C) 2003 American Institute of Physics.
10.1063/1.1606105
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