Peer-Reviewed Journal Details
Mandatory Fields
Tan, WS and Houston, PA and Parbrook, PJ and Wood, DA and Hill, G and Whitehouse, CR;
2002
Applied Physics Letters
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
Validated
Optional Fields
80
17
3207
3209
The gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate-drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of -0.11 V K-1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible. (C) 2002 American Institute of Physics.
10.1063/1.1473701
Grant Details