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Pendlebury, ST and Lynam, P and Mowbray, DJ and Parbrook, PJ and Wood, DA and Lada, M and O'Neill, JP and Cullis, AG and Skolnick, MS;
2001
November
Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells
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188
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871
875
We report optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.
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