Parbrook, PJ and Wood, DA and Tan, WS and Houston, PA and Hill, G and Whitehouse, CR and Martin, RW and Trager-Cowan, C and Watt, A;

2001

November

Optimisation of AlGaN/GaN heterostructures for field effect transistors grown by metalorganic vapour phase epitaxy

Validated

()

188

1

227

231

The influence of both the AlGaN barrier and GaN underlayer in single heterostructures has been examined. The results show that room temperature Hall measurements can lead to an overestimate of the sheet carrier concentration due to bulk contributions. Orders of magnitude increase of in the GaN resistivity can be achieved by reducing the growth temperature, The luminescence properties of the structure have been examined by cathodoluminescence showing strong features attributable to the two-dimensional electron gas.