Peer-Reviewed Journal Details
Mandatory Fields
Tanner, BK and Parbrook, PJ and Whitehouse, CR and Keir, AM and Johnson, AD and Jones, J and Wallis, D and Smith, LM and Lunn, B and Hogg, JHC;
Applied Physics Letters
Dependence of the critical thickness on Si doping of InGaAs on GaAs
Optional Fields
The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4x10(18) atoms/cm(3), an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration. (C) 2000 American Institute of Physics. [S0003- 6951(00)04840-3].
Grant Details