Peer-Reviewed Journal Details
Mandatory Fields
Onomura, M and Saito, S and Rennie, J and Nishikawa, Y and ParbrooK, PJ and Ishikawa, M and Hatakoshi, G;
1996
Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment
Validated
()
Optional Fields
35
2B
1428
1430
We have demonstrated the relationship between the structural and electrical properties of the chemically treated p-type ZnSe surface. The unstable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to have the effect of lowering the Schottky barrier height at the Au/p-type ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.
Grant Details