Peer-Reviewed Journal Details
Mandatory Fields
NISHIKAWA, Y and ISHIKAWA, M and PARBROOK, PJ and ONOMURA, M and SAITO, S and HATAKOSHI, GI;
1995
Journal of Crystal Growth
THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
Validated
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Optional Fields
150
1-4, Part 2
807
811
The effect of thermal annealing on nitrogen-doped ZnSe grown by molecular beam epitaxy has been investigated as a function of nitrogen concentration. It was found that thermal stability of the nitrogen accepters in highly nitrogen-doped ZnSe markedly degraded. Furthermore, in order to avoid significant decreases in net acceptor concentration by thermal annealing, the nitrogen concentration should be kept within the region of high electrical activity, that is below 1x10(18) cm(-3).
Grant Details