Peer-Reviewed Journal Details
Mandatory Fields
CULLIS, AG and WILLIAMS, GM and COCKAYNE, B and WRIGHT, PJ and SMITH, PW and PARBROOK, PJ and HALSALL, MP;
1989
Institute of Physics Conference Series
THE CHARACTERIZATION OF CADMIUM-SULFIDE AND CADMIUM SELENIDE EPITAXIAL LAYERS GROWN BY MOCVD ON GALLIUM-ARSENIDE
Validated
()
Optional Fields
100
217
222
Both conventional and high resolution transmission electron microscopy have been used to determine the structure of thin layers of CdS grown on GaAs. It is shown that the wurtzite modification of CdS forms on the (111)A GaAs surface and that the interface between the two materials is characterised by arrays of misfit dislocations both at interface step edges and just within the CdS. The epitaxial layers contain mainly threading dislocations and are of sufficient perfection to allow the subsequent growth of high quality wurtzite-structure CdS/CdSe superlattices. However, growth of CdS on the (001) GaAs surface leads to the formation of sphalerite-structure layers. These exhibit less efficient misfit stress relief with the formation of interfacial dislocations and inclined stacking faults in an asymmetrical array.
Grant Details