Peer-Reviewed Journal Details
Mandatory Fields
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E
2010
August
Applied Physics Letters
Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
Published
WOS: 47 ()
Optional Fields
Breakdown voltage Channel mobility Device-scaling Electrical analysis High mobility High-k oxides Interface control layer Interface quality Interface state Native oxides Scaling trends Self-cleaning effects Structure improvement
97
5
052904-1
052904-3

High mobility III-V substrates with high- k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al 2O 3. A thin (∼1 nm) Al 2O 3interface control layer is deposited on In 0.53Ga 0.47 As prior to HfO 2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by ∼50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In 0.53Ga 0.47 As native oxides.

10.1063/1.3473773
Grant Details