Chen, WB,McCarthy, KG,Mathewson, A,Copuroglu, M,O'Brien, S,Winfield, R;

2010

January

IEEE Electron Device Letters

High-Performance MIM Capacitors Using Novel PMNT Thin Films

Validated

()

Capacitance density dielectric constant high-kappa metal-insulator-metal (MIM) capacitor Pb(Mg(0.33)Nb(0.67))(0.65)Ti(0.35)O(3) (PMNT) thin-film devices

31

996

998

High-performance metal-insulator-metal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)(0.65)Ti0.35O3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-kappa of 1115 (high capacitance density of 26 fF/mu m(2)) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2 x 10(-10) A/cm(2) and low loss tangent of 0.0188 are also obtained. The results indicate that high-kappa PMNT is a promising candidate material for high-performance MIM capacitors.

DOI 10.1109/LED.2010.2052585