Dannecker, T,Jin, Y,Cheng, H,Gorman, CF,Buckeridge, J,Uher, C,Fahy, S,Kurdak, C,Goldman, RS;

2010

January

Physical Review B

Nitrogen composition dependence of electron effective mass in GaAs1-xNx

Validated

()

MOLECULAR-BEAM EPITAXY GALLIUM-ARSENIDE TEMPERATURE-DEPENDENCE CYCLOTRON-RESONANCE GAAS BAND TRANSPORT SEMICONDUCTORS ABSORPTION DENSITY

82

We have investigated the N composition, x, and temperature, T, dependence of the electron effective mass, m*, of GaAs1-xNx films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m* on x and an increasing T dependence of m* with x. These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE.

ARTN 125203