Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O'Reilly, EP;

2010

January

Physical Review B

Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

Validated

()

SCANNING-TUNNELING-MICROSCOPY ELECTRONIC-PROPERTIES NITROGEN-ATOMS GAASN SEMICONDUCTORS SPECTROSCOPY SURFACE

82

We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

ARTN 161201