Peer-Reviewed Journal Details
Mandatory Fields
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK;
2009
July
Microelectronic Engineering
Degradation Dynamics and Breakdown of MgO Gate Oxides
Published
()
Optional Fields
Breakdown Magnesium oxide MOS
86
7-9
1715
1717

The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.

DOI 10.1016/j.mee.2009.03.009
Grant Details