Peer-Reviewed Journal Details
Mandatory Fields
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB;
2009
July
Microelectronic Engineering
Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2
Validated
()
Optional Fields
86
7-9
1550
1553
The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-x As valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed band-gap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface. (C) 2009 Elsevier B.V. All rights reserved,.
DOI 10.1016/j.mee.2009.03.003
Grant Details
Science Foundation Ireland