Peer-Reviewed Journal Details
Mandatory Fields
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC;
Journal of Vacuum Science & Technology B
Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
Optional Fields
Capacitance Control theory Dielectric devices Dielectric materials Electric conductivity Metal recovery MOS capacitors Semiconductor device manufacture

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.

DOI 10.1116/1.3025910
Grant Details