Brennan, B, Milojevic, M, Kim, HC, Hurley, PK, Kim, J, Hughes, G, Wallace, RM;

2009

May

Electrochemical and Solid State Letters

Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as

Validated

()

12

6

205

207

The effect of water and ozone as the oxidant in the atomic layer deposition (ALD) of aluminum oxide on the ammonium-sulfide-passivated In0.53Ga0.47As surface is compared using X-ray photoelectron spectroscopy (XPS) after each "half-cycle" of the ALD process. While the first half-cycle of the aluminum precursor tri-methyl aluminum (TMA) reduces the residual native oxides to within detection limits of XPS, the ozone oxidation process causes significant reoxidation of the substrate in comparison to the water-based process. Subsequent TMA pulses fail to remove the excess interfacial oxides caused by ozone oxidation, resulting in the formation of an oxide interlayer..

DOI 10.1149/1.3109624