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Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB;
Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening
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In this paper, a process flow well suited for screening of novel high-k dielectrics is presented. In vacuo silicon capping of the dielectrics excludes process and handling induced influences especially if hygroscopic materials are investigated. A gentle, low thermal budget process is demonstrated to form metal gate electrodes by turning the silicon capping into a fully silicided nickel silicide. This process enables the investigation of rare earth oxide based high-k dielectrics and specifically their intrinsic material properties using metal oxide semiconductor (MOS) capacitors. We demonstrate the formation of nickel monosilicide electrodes which show smooth interfaces to the lanthanum- and gadolinium-based high-k oxide films. The dielectrics have equivalent oxide thicknesses of EOT = 0.95 nm (lanthanum silicate) and EOT = 0.6 nm (epitaxial gadolinium oxide). (c) 2008 Elsevier B.V. All rights reserved..
DOI 10.1016/j.mee.2008.03.016
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