Dobaczewski, L, Bernardini, S, Kruszewski, P, Hurley, PK, Markevich, VP, Hawkins, ID, Peaker, AR;

2008

June

Applied Physics Letters

Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy

Validated

()

92

24

The energy distribution of the P-b centers at the Si/SiO2 interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only P-b0 states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for P-b0 and is presumed to be P-b1. (C) 2008 American Institute of Physics..

DOI 10.1063/1.2939001