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Polimeni, A, Pettinari, G, Trotta, R, Masia, F, Felici, M, Capizzi, M, Lindsay, A, O'Reilly, EP, Niebling, T, Stolz, W, Klar, PJ, Martelli, F, Rubini, S;
Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn
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The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m,, and the electron gyromagnetic factor, g(e). In the N concentration range from 0% to 0.7%, both m(e) and g(e) show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim..
DOI 10.1002/pssa.200777462
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