Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW;

2007

January

Microelectronics Reliability

Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks

Validated

()

47

8

1195

1201

The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 degrees C. (c) 2006 Elsevier Ltd. All rights reserved..

DOI 10.1016/j.microrel.2006..09.030