Other

Volkos, SN, Bernardinia, S, Rigopoulos, N, Efthymiou, ES, Hawkins, ID, Hamilton, B, Dobaczewski, L, Hall, S, Hurley, PK, Delabie, A, Peaker, AR;

2007

July

Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate

Validated

1

()

We report extrinsic stacking fault generation at the Si surface of samples with HfAlxOy and HfO2 high-k dielectrics grown by MOCVD at 500 and 350 degrees C respectively and discuss its origin. As opposed to a recent assertion [Kim and Yong, J. Appl. Phys. 100 (2006) 044106] ascribing the formation of dislocations in a HfSixOy-Si system prepared by ALD at 300 degrees C to diffusion of Hf atoms during film growth into the Si substrate, we found no such evidence for samples whose Si substrate was ALD-covered with HfO2 and HfSixOy dielectrics at a comparable temperature to the above ALD and MOCVD cases..

2374

2377

DOI 10.1016/j.mee.2007.04.047