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Hurley, PK, Cherkaoui, K;
2006
June
Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films
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The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 degrees C..
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