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Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK;
2006
June
Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition
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In this paper, the electrical and structural analysis of HfO2 thin films formed by Ion Assisted Deposition are reported. The electrical results show excellent layer uniformity and very good reproducibility before post deposition annealing. The influence of the Oxygen flow during the growth upon the electrical properties of the film has also been investigated. Forming gas annealing removed the hysteresis observed in the capacitance measurements. However, the electrical results and TEM measurements show the presence of an important SiO2 interfacial layer..
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