Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M;

2011

January

Physica Status Solidi B-Basic Solid State Physics

Modelling and direct measurement of the density of states in GaAsN

Validated

()

density of states dilute nitrides linear combination of isolated nitrogen states scanning tunnelling spectroscopy ELECTRONIC-STRUCTURE ALLOYS SEMICONDUCTORS SPECTROSCOPY GAP

248

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1171

The density of states for a GaAsN sample with a nitrogen concentration of x = 1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN. (C) 2011 WILE-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI 10.1002/pssb.201000700