Peer-Reviewed Journal Details
Mandatory Fields
Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M;
Physica Status Solidi B-Basic Solid State Physics
Modelling and direct measurement of the density of states in GaAsN
Optional Fields
density of states dilute nitrides linear combination of isolated nitrogen states scanning tunnelling spectroscopy ELECTRONIC-STRUCTURE ALLOYS SEMICONDUCTORS SPECTROSCOPY GAP
The density of states for a GaAsN sample with a nitrogen concentration of x = 1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN. (C) 2011 WILE-VCH Verlag GmbH & Co. KGaA, Weinheim
DOI 10.1002/pssb.201000700
Grant Details